Materialy Elektronnoi Tekhniki
| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| Название | Isotopic Effects in Spectra of Electrically Active Impurities in Silicon−28, 29 and 30 with High Isotopic Enrichment |
| Авторы | T. V. Kotereva, A. V. Gusev, V. A. Gavva, E. A. Kozyrev |
| Информация об авторах | G. G. Devyatykh Institute of Chemistry of High−Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod: T. V. Kotereva A. V. Gusev V. A. Gavva E. A. Kozyrev |
| Название | Layering of GeSi solid solution on the GaAs and Si substrates |
| Авторы | E. F. Venger, L. A. Matveeva, P. L. Nelyuba |
| Информация об авторах | V. Lashkarov Institute of Semiconductor Physics, the National Academy of Science of Ukraine: E. F. Venger L. A. Matveeva P. L. Nelyuba |
| Название | Specific Features of Microinclusion Formation in Multisilicon Crystals Grown from Refined Metallurgical Silicon by the Bridgman–Stockbarger Method |
| Авторы | S. M. Pescherova, L. A. Pavlova, A. I. Nepomnyaschikh, I. A. Eliseev and Yu. V. Sokolnikova |
| Информация об авторах | Federal State Budget Research Organization A.P. Vinogradov Institute of Geochemistry, Siberian Branch, Russian Academy of Sciences: S. M. Pescherova L. A. Pavlova A. I. Nepomnyaschikh I. A. Eliseev Yu. V. Sokolnikova |
| Название | Modeling of Ion Implantation and Rapid Thermal Treatments during the Formation of Active Regions of Submicron and Nanometer Silicon IС |
| Авторы | F. F. Komarov, A. F. Komarov, A. M. Mironov, G. M. Zayats, Y. V. Makarevich, S. A. Miskevich |
| Информация об авторах | A. N. Sevchenko Institute of Applied Physics Problems: F. F. Komarov A. F. Komarov A. M. Mironov Y. V. Makarevich S. A. Miskevich
Institute of Mathematics, Academy of Sciences of Belarus: G. M. Zayats |
| Название | Stress and Adhesion of CVD Grown Polycrystalline 3C–SiC Films on Silicon Substrates |
| Авторы | T. M. Tkacheva, L. M. Ivanova, K. D. Demakov, M. N. Shakhov |
| Информация об авторах | MADI: T. M. Tkacheva M. N. Shakhov
NRC «Kurchatov Institute: L. M. Ivanova K. D. Demakov |
| EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS | |
| Название | Influence of Ge Ion Implantation into Silicon Dioxide/Silicon Structure on Charge Accumulation under Low–Energy Stationary Radiation |
| Авторы | O. P. Guskova, V. M. Vorotynthev, E. L. Shobolov, N. D. Abrosimova |
| Информация об авторах | Federal State –owned Unitary Enterprize «Federal Science and Production Center Measuring Systems Research Institute named after Yu. Ye. Sedakov»: O. P. Guskova E. L. Shobolov N. D. Abrosimova
Nizhny Novgorod, State technical University named after R. E. Alekseev: V. M. Vorotynthev |
| Название | Investigation of Sheet Resistance Distribution of Ti, Al, Ni, Cr and Au Metal Films on Silicon Substrates |
| Авторы | K. D. Vaniukhin, S. P. Kobeleva, Yu. A. Konzcevoy, V. A. Kurmatshev, L. A. Seidman |
| Информация об авторах | IFYAE NIYAU MIFI: K. D. Vaniukhin L. A. Seidman
National University of Science and Technology MISiS: S. P. Kobeleva
FGUP NPP Pulsar: Yu. A. Konzcevoy |
| Название | Study of Electrical Properties of Schottky Diodes Fabricated on Silicon with Different Metal Layers |
| Автор | I. G. Pashayev |
| Информация об авторе | Baku State University, Azerbaijan Republic: I. G. Pashayev |
| Название | Hydrogen–Induced Cleavage of Silicon Wafers by Electrochemical Etching |
| Авторы | K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. Zh. Tokmoldin, B. A. Rakhmetov and T. Aitmukan |
| Информация об авторах | Physical and Technical Institute of the Ministry of Education and Science, Republic of Kazakhstan: K. B. Tynyshtykbaev Yu. A. Ryabikin S. Zh. Tokmoldin T. Aitmukan |
| NANOMATERIALS AND NANOTECHNOLOGY | |
| Название | Nanosized Silicon Grown with HCl : HF : C2H5OH Electrolyte |
| Авторы | Yu. N. Parkhomenko, A. I. Belogorokhov, A. P. Bliev, V. G. Sozanov |
| Информация об авторах | OAO Giredmet: Yu. N. Parkhomenko A. I. Belogorokhov
GOU VPO K.L. Khetagurov SOGU: A. P. Bliev V. G. Sozanov |
| Название | Investigation of formation porous structures in sol−gel systems by silicon oxide and oxides of metals |
| Авторы | V. S. Levitskiy, A. S. Lenshin, A. I. Maximov, E. V. Maraeva, V. A. Moshnikov |
| Информация об авторах | V. I. Ulyanov (Lenin) Saint–Petersburg State Electrotechnical University LETI, Saint–Petersburg: V. S. Levitskiy A. I. Maximov V. A. Moshnikov
Voronezh State University: A. S. Lenshin |
| Название | Diffraction Studies of the Formation of Silicon Nanocrystals in the SiOx/Si Compounds after Carbon Ion Implantation |
| Авторы | V. A. Terekhov, D. I. Tetelbaum, I. E. Zanin, K. N. Pankov, D. E. Spirin, A. N. Mikhaylov, A. I. Belov, A. V. Ershov |
| Информация об авторах | Voronezh State University: V. A. Terekhov I. E. Zanin K. N. Pankov D. E. Spirin
Physico–Technical Research Institute at the Lobachevsky State University of Nizhni Novgorod: D. I. Tetelbaum
Lobachevsky State University of Nizhni Novgorod: A. V. Ershov |
| Название | Gradient Planar Optical Waveguides on the Basis of Fluorinated Silica Glasses Fabricated in Low Pressure Microwave Plasma |
| Авторы | I. P. Shilov, L. U. Kochmarev, N. T. Klyuchnik, M. Ya. Yakovlev |
| Информация об авторах | Fryazino Branch, V.A. Kotelnikov Institute of Radio Engineering and Electronics: I. P. Shilov L. U. Kochmarev
TsNITI Technomash–WOS Co: N. T. Klyuchnik M. Ya. Yakovlev |
| Название | Features of Chemically Etched Porous Silicon |
| Автор | T. Yu. Bilyk |
| Информация об авторе | National Technical University of Ukraine «Kiev Polytechnical Institute», Ukraine: Yu. Bilyk |
