Materialy Elektronnoi Tekhniki
| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| Название | ZnTe Homogeneity Limits |
| Авторы | I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev |
| Информация об авторах | D. Mendeleyev University of Chemical Technology of Russia I. Kh. Avetissov, E. N. Mozhevitina, A. V. Khomykov, R. I. Avetissov, A. Yu. Zinovjev |
| MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS | |
| Название | The Certified Reference Materials of Organization for Optical Parameters Measurement of Single Crystals and Stocks on Their Base |
| Авторы | M. B. Bykova, Zh. A. Goreeva, I. S. Didenko, N. S. Kozlova, V. V. Sidorin |
| Информация об авторах | National University of Science and Technology MISiS M. B. Bykova, Zh. A. Goreeva, I. S. Didenko, N. S. Kozlova
Moscow state technical university of radio engineering, electronics and automation V. V. Sidorin |
| MATERIALS SCIENCE AND TECHNOLOGY. MAGNETIC MATERIALS | |
| Название | Research Opportunities Ferrite 2000NM the Short Process Flow |
| Авторы | V. G. Kostishin, I. I. Kaneva, V. G. Andreev, A. N. Nikolaev, E. I. Volkova |
| Информация об авторах | University of Science and Technology MISiS V. G. Kostishin, I. I. Kaneva, V. G. Andreev, A. N. Nikolaev, E. I. Volkova |
| PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
| Название | X−ray Topographic Study of Defects in Si−based Multilayer Epitaxial Power Devices |
| Авторы | I. L. Shulpina, V. A. Kozlov |
| Информация об авторах | Ioffe Physico–Technical Institute of Russian Academy of Sciences I. L. Shulpina
FID Technology Ltd., Power Semiconductors Ltd V. A. Kozlov |
| Название | Application of in situ X–ray Reflectivity for Determining parameters of Nanoscale Silicon Films |
| Авторы | I. S. Smirnov, E. G. Novoselova, A. A. Egorov, I. S. Monakhov |
| Информация об авторах | Moscow institute of electronics and mathematic, Higher School of Economics I. S. Smirnov, E. G. Novoselova, A. A. Egorov
Research Institute of Advanced Materials and Technologies I. S. Monakhov |
| EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS | |
| Название | Electro−physical and Photoelectrical Characteristics of MIS−structures Based on Hetero−epitaxial HgCdTe MBE with Non−uniform Distribution of Composition |
| Авторы | A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh |
| Информация об авторах | Detached structural subdivision «Siberian Physical–Technical Institute of Tomsk State University A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh |
| Название | Influence of Conditions of Growth on Structural Perfection of Layers of AlN Received by Method MOS−gidridnoy of an Epitaxy |
| Авторы | A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa, A. A. Marmalyuk, R. Kh. Akchurin |
| Информация об авторах | Sigm Plus Co. A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa
Sigm Plus Co., Moscow State University of Fine Chemical Technologies
Moscow State University of Fine Chemical Technologies R. Kh. Akchurin |
| Название | Prediction the Influence of Technological Parameters of Formation of Gas−sensing Materials Based on Polyacrylonitrile on Resistance |
| Авторы | S. P. Konovalenko, T. A. Bednaya, T. V. Semenistaya, A. N. Korolev |
| Информация об авторах | Taganrog State Pedagogical Institute S. P. Konovalenko, T. A. Bednaya
Technological institute of Southern Federal university in g. Taganrog T. V. Semenistaya, A. N. Korolev |
| NANOMATERIALS AND NANOTECHNOLOGY | |
| Название | Influence of Silicon Layer Properties on Capacitance Parameters of MIS/SOS−structures |
| Авторы | K. L. Enisherlova, V. G. Goriachev, E. M. Temper, S. A. Kapilin |
| Информация об авторах | FSUE «S&PE «Pulsar» K. L. Enisherlova, V. G. Goriachev, E. M. Temper, S. A. Kapilin |
| Название | Formation of Nanocomposites Ni/C Based of Polyacrylonitrile Under IR−radiation |
| Авторы | D. G. Muratov, E. V. Yakushko, L. V. Kozhitov, A. V. Popkova, M. A. Pushkarev |
| Информация об авторах | A. V. Topchiev Institute of Petrochemical Synthesis, RAS D. G. Muratov, L. V. Kozhitov
University of Science and Technology MISiS E. V. Yakushko, A. V. Popkova, M. A. Pushkarev |
| Название | Finely Divided Methylsilsesquioxane Particles with SiO4/2 — Fragments in Structure |
| Авторы | P. A. Averichkin, Y. B. Andrusov, I. A. Denisov, T. B. Klytchbaev, Y. N. Parkhomenko, N. A. Smirnova, |
| Информация об авторах | Federal State Research and Design Institute of Rare Metal Industry P. A. Averichkin, Y. B. Andrusov, I. A. Denisov, Y. N. Parkhomenko, N. A. Smirnova
Chemical and Metallurgical Holding «Metal» T. B. Klytchbaev |
