Materialy Elektronnoi Tekhniki
| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| Название | Formation and Structure of Mesoporous Silicon |
| Авторы | N. I. Kargin, A. O. Sultanov, A. V. Bondarenko, V. P. Bondarenko, S. V. Redko, A. S. Ionov |
| Информация об авторах | National Research Nuclear University MEPhI N. I. Kargin A. O. Sultanov
Belarusian State University of Informatics and Radioelectronics: A. V. Bondarenko V. P. Bondarenko S. V. Redko
OJSC «OKB−Planeta»: A. S. Ionov |
| Название | Oxygen and Erbium Distribution in Diffusion Doped Silicon |
| Авторы | M. N. Drozdov, N. V. Latuchina, M. V. Stepikhova, V. A. Pokoeva, M. A. Surin |
| Информация об авторах | Institute for Physics of Microstructures RAS: M. N. Drozdov M. V. Stepikhova
Samara State University N. V. Latuchina V. A. Pokoeva M. A. Surin |
| Название | Structural Studies of Large [100]−Oriented Czochralski Grown GaSb Single Crystals |
| Авторы | V. S. Ezhlov, A. G. Milvidskaya, E. V. Molodtsova, M. V. Mezhennyi |
| Информация об авторах | JSC Giredmet: V. S. Ezhlov A. G. Milvidskaya E. V. Molodtsova
JSC Optron: M. V. Mezhennyi |
| Название | Higher School of Economics The Influence of Illumination upon Electrophysical Parameters of CdTe Sample Contacts |
| Авторы | A. G. Belov, V. A. Golubiatnikov, F. I. Grigor’ev, A. P. Lysenko, N. I. Strogankova, M. B. Shadov |
| Информация об авторах | Joint Stock Company «Giredmet» A. G. Belov M. B. Shadov
National Research University V. A. Golubiatnikov F. I. Grigor’ev N. I. Strogankova |
| MATERIALS SCIENCE AND TECHNOLOGY. MAGNETIC MATERIALS | |
| Название | Mossbauer Investigation of Magnetic Polymer Nanocomposites Based on Magnetite and Polyvinyl Alcohol |
| Авторы | V. G. Kostishyn, B. K. Ostafiychuk, V. V. Moklyak, A. V. Nuriev |
| Информация об авторах | National University of Science and Technology MISIS: V. G. Kostishyn A. V. Nuriev
V. Stefanik Karpaty National University: B. K Ostafiychuk
V. V. Moklyak |
| Название | Enhanced Magnetoresistive Effect in Nickel Nanopillar Arrays on Silicon Substrates |
| Авторы | Yu. A. Fedotova, D. K. Ivanov, Yu. A. Ivanova, A. V. Mazanik, I. A. Svito, E. A. Streltsov, A. K. Fedotov, A. Saad, S. I. Tyutyunnikov, P. Yu. Apel |
| Информация об авторах | National Center for Physics of Particles and High Energies, Belarus State University, Republic of Belarus: Yu. A. Fedotova
Belarus State University, Republic of Belarus: D. K. Ivanov Yu. A. Ivanova A. V. Mazanik I. A. Svito E. A. Streltsov A. K. Fedotov
Al−Balqa Applied University, Jordan: A. Saad
Joint Institute for Nuclear Research: P. Yu. Apel |
| MODELING OF PROCESSES AND MATERIALS | |
| Название | Peculiarities of Propagation of Electromagnetic Excitation in Imperfect 1D Si/LC Photonic Crystal |
| Авторы | V. V. Rumyantsev, S. A. Fedorov |
| Информация об авторах | A. A. Galkin Donetsk Institute for Physics and Engineering, National Academy of Sciences, Donetsk, Ukraine: V. V. Rumyantsev S. A. Fedorov |
| EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS | |
| Название | Degradation of Three–Junction Amorphous Si : H Based Solar Cells |
| Авторы | V. N. Murashev, S. A. Legotin, A. A. Krasnov, A. A. Dudkin, D. A. Zezin |
| Информация об авторах | National University of Scienceand Technology MISIS: V. N. Murashev S. A. Legotin A. A. Krasnov
KVANT Research and Production Enterprise: A. A. Dudkin
National Research University Moscow Energy Institute: D. A. Zezin |
| Название | Statistical Analysis of Ge Influence on Radiation and Thermal Stability of the Electrophysical Characteristics of Cz–Si Based Device n—p—n—p–Structures |
| Авторы | S. V. Bytkin, T. V. Kritskaya, S. P. Kobeleva |
| Информация об авторах | Zaporizhstal Integrated Iron & Steel Works JSC, Ukraine: S. V. Bytkin
Zaporozhye State Engineering Academy, Ukraine: T. V. Kritskaya
National University of Science and Technology MISIS: S. P. Kobeleva |
| Название | Buffer Monolayers on the Strain State of GaAs Films on Vicinal Si(001) Substrates |
| Авторы | I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, A. S. Ilin, M. A. Putyato, B. R. Semyagyn, V. V. Preobrazhensky |
| Информация об авторах | Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia Effects of the Formation Method of Early GaP: I. D. Loshkarev A. P. Vasilenko E. M. Trukhanov A. V. Kolesnikov A. S. Ilin M. A. Putyato B. R. Semyagyn |
| NANOMATERIALS AND NANOTECHNOLOGY | |
| Название | Properties of Si Quantum Dots/SiOx Porous Film Structures Synthesized using the Hydrofluoric Technology |
| Авторы | V. A. Dan’ko, S. O. Zlobin, I. Z. Indutnyi, I. P. Lisovskyy, V. G. Litovchenko, K. V. Michailovska, P. E. Shepeliavyi, E. V. Begun |
| Информация об авторах | V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine: V. A. Dan’ko S. O. Zlobin I. Z. Indutnyi I. P. Lisovskyy K. V. Michailovska P. E. Shepeliavyi
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Physikalisches Institut, Goethe−Universitaet, Frankfurt am Main, Germany |
| PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
| Название | Method of Semiconductor Energy Level Temperature Spectroscopy |
| Автор | F. I. Manyakhin |
| Информация об авторе | National University of Science and Technology MISIS Charge Relaxation Based Integral–Differential: F. I. Manyakhin |
| Название | The Method of Separate Determination of High−Ohmic Sample Resistance and Contact Resistance |
| Авторы | V. A. Golubiatnikov, F. I. Grigor’ev, A. P. Lysenko, N. I. Strogankova, M. B. Shadov, A. G. Belov, V. E. Kanevsky |
| Информация об авторах | National Research University Higher School of Economics: V. A. Golubiatnikov F. I. Grigor’ev A. P. Lysenko M. B. Shadov Joint Stock Company «Giredmet»: A. G. Belov |
