Журналы →
Materialy Elektronnoi Tekhniki →
2010 →
№4
Журналы →
Materialy Elektronnoi Tekhniki →
2010 →
№4
Materialy Elektronnoi Tekhniki
Materials science and technology. Semiconductors | |
Название | The peculiarities of internal getter formation in nitrogen doped dislocation free silicon wafers |
Авторы | М. V. Mezhennyi, М. G. Milvidskii, V. Ya. Resnick |
Информация об авторах | M. V. Mezhennyi, M. G. Milvidskii, OAO «Giredmet»; V. Ya. Resnick, Insitute for Chemical Problems of Microelectronics |
Название | Use of silicon tetrachloride hydrogenation techniques in polycrystalline silicon production |
Авторы | V. M. Ivanov, Yu. V. Trubitsin |
Информация об авторах | V. M. Ivanov and Yu. V. Trubitsin, Classical Private University, Ukraine |
Materials science and technology. Dielectrics | |
Название | Technological form single crystals growth from aqueous solution for nonlinear optic devices |
Автор | O. G. Portnov |
Информация об авторе | O. G. Portnov, National Research University «MISiS» |
Materials science and technology. Magnetic materials | |
Название | Effect of microstructure on properties of radio-absorbing nickel-zinc ferrites |
Авторы | V. G. Kostishin, R. M. Vergazov, V. G. Andreev, S. B. Bibikov, S. V. Podgornaya, A. T. Morchenko |
Информация об авторах | V. G. Kostishin, National Research University «MISiS»; R. M. Vergazov, V. G. Andreev, The Kuznetsk Institute of information and control technology (branch of Penza state university); S. B. Bibikov, Institute of Biochemical Physics of RAS; S. V. Podgornaya, A. T. Morchenko, National Research University «MISiS». |
Modeling of processes and materials | |
Название | Thermal optimization of silicon single crystal growth on «Redmet-90M» puller |
Авторы | N. A. Verezub, A. I. Prostomolotov |
Информация об авторах | N. A. Verezub, A. I. Prostomolotov, A. Ishlinsky Institute for Problems in Mechanics of RAS |
Название | Theoretical calculation of vibrational and rotational modes in organic semiconductors based on metal-free phthalocyanine molecules |
Авторы | I. A. Belogorokhov, E. V. Tikhonov, A. A. Dobrovolskii, A. V. Galeeva, A. I. Artamkin, D. E. Dolzhenko, L. I. Ryabova, D. R. Khokhlov |
Информация об авторах | I. A. Belogorokhov, OAO «Giredmet», E. V. Tikhonov, A. A. Dobrovolskii, A. V. Galeeva, A. I. Artamkin, D. E. Dolzhenko, L. I. Ryabova, D. R. Khokhlov, M .V .Lomonosov Moscow State University. |
Nanomaterials and nanotechnology | |
Название | Phase composition study of nanocomposite SiO2CuOx, materials by x-ray absorption spectroscopy and photoelectron spectroscopy methods |
Авторы | G. E. Yalovega, V. A. Shmatko, T. N. Nazarova, V. V. Petrov, O. V. Zabluda |
Информация об авторах | G. E. Yalovega, V. A. Shmatko, T. N. Nazarova, V. V. Petrov , O. V. Zabluda, Southern Federal University |
Название | Hydrogen sorption by carbon nanomaterials |
Авторы | A. V. Timonina, D. N. Borisenko, V. V. Kveder, N. N. Kolesnikov, S. K. Brantov |
Информация об авторах | A. V. Timonina, D. N. Borisenko, V. V. Kveder, N. N. Kolesnikov, S. K. Brantov, ISSP Rus. Acad. Sci. |
Epitaxial layers and multilayered compositions | |
Название | Effect of molecular beam epitaxy conditions on the structure and properties of silicon on sapphire layers |
Авторы | D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, N. O. Krivulin, A. V. Nezhdanov, S. M. Plankina, E. A. Pitirimova, M. V. Romashova |
Информация об авторах | D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, N. O. Krivulin, A. V. Nezhdanov, S. M. Plankina, E. A. Pitirimova, M. V. Romashova, University of Nizhniy Novgorod |
Atomic structures and methods of structural investigations | |
Название | Effect of thermal neutron irradiation on the decomposition of oxygen solid solution in silicon |
Авторы | K. N. Enisherlova, V. T. Bublik, K. D. Scherbachev, M. I. Voronova, E.M. Temper |
Информация об авторах | K. N. Enisherlova, National Research University «MISiS»; V. T. Bublik, K. D. Scherbachev, M. I. Voronova, FGUP NPP Pulsar; E.M. Temper, National Research University «MISiS» |
Название | Study of the structural evolution of Si damaged layer after implantation with 64Zn+ ions and subsequent annealing |
Авторы | K. D. Shcherbachev, V. V. Privezentsev, V. V. Saraikin, D. A. Podgornyy |
Информация об авторах | K. D. Shcherbachev, National Research University «MISiS»; V. V. Privezentsev, Institute of Physics & Technology, Russian Academy of Sciences; V. V. Saraikin, Research Institute of Physical Problems; D. A. Podgornyy, National Research University «MISiS». |
Other questions | |
Название | The program complex for analysis and calculation of grown-in microdefects formation in dislocation-free silicon single crystals |
Авторы | V. I. Talanin, I. E. Talanin, N. Ph. Ustimenko |
Информация об авторах | V. I. Talanin, I. E. Talanin, N. Ph. Ustimenko, Classic Private University, Ukraine |