A. N. Sevchenko Institute of Applied Physics Problems:

F. F. Komarov

A. F. Komarov

A. M. Mironov

Y. V. Makarevich

S. A. Miskevich

Institute of Mathematics, Academy of Sciences of Belarus:

G. M. Zayats

The physical models and numerical algorithms allowing one to accurately simulate advanced technological processes, such as low−energy ion implantation and rapid thermal processing (RTA) are presented. A software system on the basis of these models has been designed and integrated into the microelectronics device and process modeling system Silvaco ATHENA. It enables the use of models and calculation methods alternative to those implemented in the well−known software products, mainly for solving the problems with shallow depths of doped regions.

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