OAO Giredmet:

Yu. N. Parkhomenko

A. I. Belogorokhov

GOU VPO K.L. Khetagurov SOGU:

A. P. Bliev

V. G. Sozanov

Results of experimental work with nanosized silicon (NcSi) samples which are not degraded under the action of intense laser radiation have been obtained. We show that that a significant increase in the intensity of the photoluminescence signal from NC may be caused by the structural features of their formation and by the presence of a thin SiO₂ layer on the surface of the nanocrystals.

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