Moscow institute of electronics and mathematic, Higher School of Economics

I. S. Smirnov, E. G. Novoselova, A. A. Egorov

Research Institute of Advanced Materials and Technologies

I. S. Monakhov

At present special importance attaches monitoring methods to measure the parameters of film structures directly during their formation — in situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in situ X−ray reflectivity to determine the parameters of nanoscale films in real time of their formation. Experimental results on the magnetron deposition of nanoscale Si films and other materials on silicon substrates are presented.

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