National Research Nuclear University «MEPhI»:

A. S. Gusev

A. V. Zenkevich

N. I. Kargin
D. V. Averyanov

M. M. Grekhov

Karpov Institute of Physical Chemistry:

S. M. Ryndya

Silicon carbide thin epilayers were grown on Si substrates by pulsed laser ablation of ceramic target. The influence of wafer temperature on morphological and structural properties of SiC layers was investigated by scanning electron microscopy, transmission electron microscopy and X−ray diffractometry.

1. Nishino, S. Production of large−area single−crystal wafers of cubic SiC for semiconductors / S. Nishino, J. Powell, H. Will // Appl. Phys. Lett. − 1983. − V. 42, Iss. 5. − P. 460—462.
2. Kukushkin, S. A. Novyy metod tverdofaznoy epitaksii karbida kremniya na kremnii: model' i eksperiment / S. A. Kukushkin, A. V. Osipov // Fizika tverdogo tela. − 2008. − T. 50, vyp. 7. − S. 1188—1195.
3. Fissel, A. MBE−growth of heteropolytypic low−dimensional structures of SiC / A. Fissel, U. Kaiser, B. Schröter, J. Kräußlich, W. Richter // Thin Solid Films. – 2000. − V. 380. − P. 89—91.
4. Vendan, M. Ultra−short pulsed laser deposition and patterning of SiC thin films for MEMS fabrication / M. Vendan, P. Molian, A. Bastawros // Mater. Sci. in Semiconductor Processing.− 2005. − V. 8, Iss. 6. − P. 630—645.
5. Kukushkin, S. A. Svetodiod na osnove III−nitridov na kremnievoy podlozhke s epitaksial'nym nanosloem karbida kremniya / S. A. Kukushkin, A. V. Osipov, S. G. Zhukov, E. E. Zavarin, V. V. Lundin, M. A. Sinitsyn, M. M. Rozhavskaya, A. F. Tsatsul'nikov, S. I. Troshkov, N. A. Feoktistov // Pis'ma v ZhTF. − 2012. − T. 38, vyp. 6. − S. 90—95.
6. Ghica, C. Growth and characterization of β−SiC films obtained by fs laser ablation / C. Ghica // Appl. Surf. Sci. − 2006. − V. 252, Iss. 13. − P. 4672—4677
7. Ristoscu, C. Femtosecond pulse shaping for phase and morphology control in PLD: Synthesis of cubic SiC / C. Ristoscu // Ibid. − 2006. − V. 252, Iss. 13. − P. 4857—4862
8. Borman, V. D. Roughening of a Si(100) surface induced by the adsorption of oxygen near the solidoxide nucleation threshold / V. D. Borman, Yu. Yu. Lebedinskii, V. I. Troyan // J. Experimental and Theoretical Phys. − 1998. − V. 87, N. 1. − P. 133—145.