Sevastopol National Technical University:

V. A. Gusev

Institute of Microelectronics Technology and High Purity Materials RAS:
V. V. Starkov

A. V. Tetersky

The analysis of the inertial mechanisms of separating photoexcited carriers in conventional silicon converters structure with charges pumps (SCSCP) is lead. Charges pumps represented local n⁺−areas in Si base of p−type of conductivity. The equivalent circuit of such converters like multyemitters bipolar transistor is proposed. The results of experimental investigations converters light current−voltage diagrams are presented. Technological aspects of SCSCP formation is regarded.

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