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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название The Influence of Growth Conditions and Donor Doping on Conductivity Mode and Deep Traps Spectra in TlBr Single Crystals
Автор N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, I. S. Lisitsky, M. S. Kuznetsov, K. S. Zaramenskih and A. Y. Polyakov
Информация об авторе

Joint Stock Company «Giredmet»:

N. B. Smirnov

A. V. Govorkov

E. A. Kozhukhova

I. S. Lisitsky
M. S. Kuznetsov

K. S. Zaramenskih

A. Y. Polyakov

Реферат

Studies of electrical characteristics, deep traps spectra, microcathodoluminescence (MCL) spectra of undoped and donor (Pb, Ca) doped TlBr crystals as influenced by growth conditions (Br pressure, Ar pressure, growth in air) are presented. It is shown that, for the 85−320 K temperature range, the crystal conductivity was determined not by ionic conductance but by the density of electrons and holes supplied by the ionization of deep centers. Centers with activation energies of 1−1.2 eV that pin the Fermi level in donor doped crystals are shown to play a prominent role in the recombination of nonequilibrium charge carriers. In undoped crystals the Fermi level is pinned near Ev+0.8 eV and these centers are also active in the recombination of charge carriers and are responsible for the MCL band peak near 1.85 eV. The temperature dependence of photocurrent in undoped crystals is strongly influenced by electron trapping on relatively shallow centers located 0.1−0.2 eV below the conduction band edge. Deep traps spectra revealed the presence of centers with activation energies 0.36, 0.45, 0.6 eV whose concentration increases with donor doping. Doping with Pb or Ca increases the dark resistivity of the crystals by about an order of magnitude, but Pb doping enhances the density of deep traps, which is not favorable for use of this material in radiation detectors.

Ключевые слова TlBr, deep levels, photoinduced current transient spectroscopy of deep traps, microcathodoluminescence, radiation detectors, ionic conductance, electronic conductance
Библиографический список

1. Kim, H. Continued development of thallium bromide and related compounds for gamma−ray detectors / H. Kim, A. Churilov, G. Ciampi, L. Cirignano, W. Higgins, S. Kim, P. O’Dougherty, F. Olsner, K. Shah // Nucl. Instr. and Meth. in Phys. Res. − 2011. − V. 629. P. 192—196.
2. Donmez, B. The stability of TlBr detectors at low temperature / B. Donmez, Z. He, H. Kim, L. J. Cirignano, K. Shah // Ibid. − 2010. − V. 623. − P. 1024—1029.
3. Shorohov, M. Recent results in TlBr detector crystals performance / M. Shorohov, M. Kouznetsov, I. Lisitskiy, V. Ivanov, V. Gostilo, A. Owens. IEEE Trans. Nucl. Sci. − 2009 − V. 56, N 4. − P. 1855—1858.
4. Du, M.−H. Effects of impurity doping on ionic conductivity and polarization phenomena in TlBr / M.−H. Du // Appl. Phys. Lett. − 2013. − V. 102. − P. 082102.
5. Leao, C. R. Simultaneous control of ionic and electronic conductivity in materials: thallium bromide case study / C. R. Leao, V. Lordi // Phys. Rev. Lett. − 2012 − V. 108, N 24. − P. 246604.
6. Lordi, V. Point defects in Cd(Zn)Te and TlBr: Theory / V. Lordi // J. Cryst. Growth. − 2013. − V. 379. − P. 84—92.

7. Bishop, S. R. The defect and transport properties of donor doped single crystal TlBr / S. R. Bishop, W. Higgins, G. Ciampi, A. Churilov, K. S. Shah, H. L. Tuller // J. Electrochem. Soc. − 2011. − V. 158. − P. J47—J51.
8. Bishop, S. R. The defect and transport properties of acceptor doped TlBr: role of dopant exsolution and association / S. R. Bishop, H. L. Tuller, G. Ciampi, W. Higgins, J. Engel, A. Churilov, K.S. Shah // Phys. Chem. Chem. Phys. − 2012. − V. 14. − P. 10160—10167.
9. Vaitkus, J. Influence of electronic and ionic processes on electrical properties of TlBr crystals / J. Vaitkus, J. Banys, V. Gostilo, S. Zatoloka, A. Mekys, J. Storasta, A. Zindulis // Nucl. Instr. and Meth. in Phys. Res. A. − 2005. − V. 546. − P. 188—191.
10. Kozlov, V. Degradation effects in TlBr single crystals under prolonged bias voltage / V. Kozlov, M. Kemell, M. Vehkamaki, M. Leskela // Ibid. − 2007. − V. 576. − P. 10—14.
11. Du, M.−H. First principles study of native defects in TlBr: carrier trapping, compensation and polarization phenomenon / M.−H. Du // J. Appl. Phys. − 2010 − V. 108. − P. 053506.
12. Grigorjeva, L. The model of recombination process in TlBr / L. Grigorjeva, D. Millers // Nucl. Instr. and Meth. Phys. Res. − 2002. − V. 191. − P. 131—134.
13. Kim, H. Developing larger TlBr detectors−detector performance / H. Kim, L. J. Cirignano, A. V. Churilov, G. Ciampi, W. M. Higgins, F. Olshner, K. S. Shah // IEEE Trans. Nucl. Sci. − 2009. − V. 56. − P. 185.
14. Du, M.−H. First principles study of impurities in TlBr / M.−H. Du // J. Appl. Phys. − 2012. − V. 111. − P. 073519.

15. Smirnov, N. B. Electrophysisical characteristics of TlBr crystals grown in various ambients / N. B. Smirnov, I. S. Lisitsky, M. S. Kuznetsov, A. V. Govorkov, E. A. Kozhukhova // IEEE Nucl. Sci. Symp. Conf. Record. − 2006. − V. 6. − P. 3700.
16. Gazizov, I. M. Kinetika otklika toka detektorov TlBr v pole gamma-izlucheniya vysokoi moshnosti dozy / I. M. Gazizov, V. M. Zaletin, V. M. Kukushkin, M. S. Kuznecov, I. S. Lisickii // FTP. − 2012. − V. 46, N 3. − P. 405.
17. Smith, H. M. Electronic effects of Se and Pb dopants in TlBr / H. M. Smith, D. J. Phillips, I. D. Sharp, J. W. Beeman, D. C. Chrzan, N. M. Haegel, E. E. Haller, G. Ciampi, H. Kim, K. S. Shah // Appl. Phys. Lett. − 2012. − V. 100. − P. 202102.
18. Smirnov, N. B. Vliyanie atmosfery vyrashivaniya na harakteristiki kristallov TlBr / N. B. Smirnov, A. V. Govorkov, K. S. Zaramenskih, I. S. Lisickii // Cvetnye metally. − 2011. − N 6. − P. 51—55.
19. Tapiero, M. Photoinduced current transient spectroscopy in high−resistivity bulk materials: instrumentation and methodology / M. Tapiero, N. Benjelloun, J. P. Zelinger, S. El Hamdi, C. Noguet // J. Appl. Phys. − 1988 − V. 64. − P. 4006.
20. Lisickii, I. S. Elektricheskie svoistva i detektornye harakteristiki kristallov TlBr, poluchennyh v razlichnyh usloviyah / I. S. Lisickii, N. B. Smirnov, M. S. Kuznecov, A. V. Govorkov, E. A. Kozhuhova, V. M. Zaletin. // V sb. «Trudy «Giredmet». − M. : ZAO «Print», 2007. − P. 130—139.
21. Martin, G. M. Detailed electrical characterization of the deep Cr acceptor in GaAs / G. M. Martin, A. Mitonneau, D. Pons, A. Mircea, D. W. Woodward // J. Phys. C: Solid State Phys. − 1980. − N 13. − P. 3855.

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