Institute for Physics of Microstructures RAS:

M. N. Drozdov

M. V. Stepikhova

Samara State University

N. V. Latuchina

V. A. Pokoeva

M. A. Surin

The composition of diffusion silicon layers doped by rare earth erbium was investigated. The diffusion source was an erbium oxide layer on the surface of the test silicon wafer. The erbium and oxygen distribution profile in silicon was measured by SIMS. The concentration of electrically active erbium impurity in the diffusion layers on silicon was determined by measuring the surface resistance and carrier mobility during consecutive etching of layers. The erbium diffusion coefficient at 1240 °C was estimated to be 4.8 · 10⁻¹³ cm² · s⁻¹. A model of erbium and oxygen simultaneous diffusion was suggested. The model takes into account the association of erbium and oxygen into complexes. The results of numerical simulation and experimental data are in a good agreement for the near−surface region of the diffusion layer.

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