JSC Giredmet:

V. S. Ezhlov

A. G. Milvidskaya

E. V. Molodtsova

JSC Optron:

M. V. Mezhennyi

The properties of Chochralski grown [100] undoped GaSb crystals with diameters > 60 mm have been studied. We found that the dislocation density reduction in large undoped crystals can be achieved both by the well known technological approaches and by isovalent impurity (indium) doping. We show that the introduction of two additional annealing stages, one being close to the moment the crystal reaches the target diameter (the length of this stage is 1 hour, the temperature being close to the melting point) and the other being 3 h long post−growth annealing at 650 °C, reduces the dislocation density in ~60 mm diameter crystals to (3—5) · 10³ cm⁻². We found that dislocations in large GaSb crystals form in two distinct temperature ranges as evidenced by the difference in the morphology of the dislocation traces. The dislocation critical stresses were identified in the 420—690 °C temperature range. It is demonstrated that isovalent doping (In, concentration in the range (2—4) · 10¹⁸ cm⁻³ leads to a significant increase in dislocation critical stresses and, accordingly, to a drastic decrease in the average dislocation density to (4—5) · 10² cm⁻². This opens new prospects for obtaining large low dislocation density GaSb crystals.

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