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| MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
| Название | Pyroelectric response and short-circuit nonstationary photoelectric current in Sn2P2S6 ferroelectric semiconductor films |
| Автор | A.A. Bogomolov, A.V. Solnyshkin, D.A. Kiselev, I.P. Raevsky, D.N. Sandjiev, V.Yu. Shonov |
| Информация об авторе | A.A. Bogomolov, e-mail: p000717@tversu.ru, A.V. Solnyshkin, D.A. Kiselev, (Tver State University); I.P. Raevsky, D.N. Sandjiev, V.Yu. Shonov, (Physics Research Institute, South Federal University). |
| Реферат | In this work, experimental results for the effect of external electric field on the pyroelectric and the photovoltaic responses of Sn2P2S6 ferroelectric semiconductor films are presented. The responses were observed under excitation of the films by periodic rectangular laser beam pulses λ = 632,8 nm). The use of monochromatic laser irradiation allows one to separate the contributions of pyroelectric and photovoltaic effects to the summary response. It is shown that photovoltaic current direction changes after preliminary polarization of the films. |
| Ключевые слова | Pyroelectric and photovoltaic responses, short circuit, films, segnetoelectric semiconductor of tin thiohypodiphosphate. |
| Библиографический список | 1. Burcev, E. V. Fotoprovodimost' segnetojelektrikov-poluprovodnikov SbSJ i Sn2P2S6 v dlinnovolnovoj oblasti spektra
/ E. V. Burcev, V. G. Lazarev, N. P. Procenko, A. I. Rodin // Sb.:
Segnetojelektriki-poluprovodniki. - Rostov-na-Donu : RGU,
1985. - P. 83—87. 2. Arnautova, E. Sn2P2S6 films for memory devices with nondestructive readout/ E. Arnautova, E. Sviridov, E. Rogach, E. Savchenko, A. Grekov // Integrated Ferroelectrics. - 1992. - V. 1. - P. 147—150 3. Bogomolov, A. A. Temperaturnaja zavisimost' piro- i fotojelektricheskogo otklika v plenkah Sn2P2S6 / A. A. Bogomolov, O. V. Malyshkina, A. V. Solnyshkin, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // Izv. RAN. Ser. fiz. - 1997. - Vol. 61, N 2. - P. 375—377. 4. Bogomolov, A. A. Osobennosti nestacionarnogo fototoka korotkogo zamykanija v plenkah segnetojelektrika-poluprovodnika Sn2P2S6 / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // FTT. - 2006. - Vol. 48, N 6. - P. 1121—1122. 5. Fridkin, V. M. / V. M. Fridkin — Fotosegnetojelektriki. - M. : Nauka, 1979. - 264 s. 6. Bogomolov, A. A. Temperaturnoe povedenie fotovol'taicheskogo i pirojelektricheskogo otklika plenok segnetojelektrikapoluprovodnika Sn2P2S6 / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevskij, N. P. Procenko, D. N. Sandzhiev // Poverhnost'. Rentgenovskie, sinhrotronnye i nejtronnye issledovanija. - 2008. - N 6. - P. 98—104. 7. Bogomolov, A. A. Pyroresponse of Sn2P2S6 films on aluminum substrate / A. A. Bogomolov, O. V. Malyshkina, A. V. Solnyshkin, I. P. Raevsky, N. P. Protzenko, D. N. Sandjiev // J. Korean Phys. Soc. - 1998. - V. 32. - P. S251—S252. 8. Bogomolov, A. A. Nonstationary photocurrent and pyroelectric response in aged Sn2P2S6 films / A. A. Bogomolov, A. V. Solnyshkin, D. A. Kiselev, I. P. Raevsky, N. P. Protzenko, D. N. Sandjiev // J. Europ. Ceramic Soc. - 2007. - V. 27. - P. 3835—3838. 9. Garn, L. E. Use of low-frejauency sinusoidal temperature waves to separate pyroelectric currents from nonpyroelectric currents. Part I. Theory / L. E. Garn, E. J. Sharp // J. Appl. Phys. - 1982. - V. 53, Iss. 12. - P. 8974—8979. |
| Language of full-text | русский |
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