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Журналы →  Materialy Elektronnoi Tekhniki →  2010 →  №2 →  Назад

MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS
Название Study of microinclusions in shaped sapphire crystals
Автор A.V. Borodin, V.A. Borodin, V.E. Iskorostinskaya, T.A. Steriopolo, I.I. Khodos and A.N. Nekrasov
Информация об авторе A.V. Borodin, e-mail: borodin@ezan.ac.ru, V.A. Borodin, e-mail: bor@ezan.ac.ru, V.E. Iskorostinskaya, e-mail: kamynina@ezan.ac.ru, T.A. Steriopolo, (FGUP EZAN); I.I. Khodos, e-mail: chodos@iptm.ac.ru, IPTM Rus. Acad. Sci.; A.N. Nekrasov, e-mail: alex@iem.ac.ru, IEM Rus. Acad. Sci
Реферат The paper presents results of chemical and structural analysis of scattering centers in shaped sapphire crystals. The scattering centers (SC) are solid phase inclusions up to 6 microns in size. The congestion of these inclusions can form «strips» and «cords» which considerably worsen the optical quality of the crystals. Microanalysis of the samples has been performed using a CAMEBAX MBX X-ray microanalyzer with a Link AN10/55S energy-dispersive X-ray spectrometer and a JEM-2000 FX electron microscope. The results have shown that the scattering centers are basically amorphous aluminum inclusions. The volume density of SC in the defective sample is 1—2 order above that of the high optical quality reference sample.
Ключевые слова Optics, sapphire, defects.
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Language of full-text русский
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