Журналы →
Materialy Elektronnoi Tekhniki →
2010 →
№2 →
Назад
Назад
| EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS | |
| Название | Effect of LED operation mode on defect formation in the p—n–junction area and quantum efficiency |
| Автор | F.I. Manyakhin |
| Информация об авторе | F.I. Manyakhin, National Research University «MISiS» |
| Реферат | The dependence of the concentration of nonequilibrium defects arising while in service LEDs on the basis of AlGaN/ InGaN/GaN and AlInGaP heteresructures with quantum wells on the time of course of direct current and electrical modes has been established. Experimental results confirming the reliability of these dependences have been received. |
| Ключевые слова | LED, heterostructure, quantum efficiency, point defects. |
| Библиографический список | 1. Torchinskaja, T. V. Preobrazovanie defektov v svetoizluchajuwih diodah GaAs:Si v neravnovesnyh uslovijah / T. V. Torchinskaja, G. N. Semenova, M. K. Shejnkman // Ukr. FZh. - 1989. - Vol. 34,
N 7. - P. 1079—1084. 2. Vavilov, V. S. Mehanizmy obrazovanija i migracii defektov v poluprovodnikah / V. S. Vavilov, A. E. Kiv, O. R. Nijazova - M. : Nauka, 1981. 3. Manjahin, F. I. Nestabil'nost' raspredelenija koncentracii jelektricheski aktivnyh centrov vblizi p—n-perehoda AlGaN/InGaN/GaN svetodiodnyh struktur s kvantovymi jamami pri proteknii prjamogo toka / F. I. Manjahin // Izv. vuzov. Materialy jelektron. tehniki. - 2005. - N 3. - P. 45—49. 4. Manjahin, F. I. Podporogovyj mehanizm obrazovanija defektov inzhektirovannymi nositeljami zarjada v poluprovodnikovyh strukturah / F. I. Manjahin // Ibid. - 1998. - N 1. - P. 37—42. 5. Manjahin, F. I. Rol' kompensirovannogo sloja v formirovanii vol't-ampernoj harakteristiki svetodiodov na osnove shirokozonnyh poluprovodnikov / F. I. Manjahin // Ibid. 2009. - N 3. - P. 51—56. 6. Bhapkar, U. V. Monte-Carlo calculation of velocity-field characteristics of wurtzite GaN / U. V. Bhapkar, M. S. Shur // J. Appl. Phys. - 1997. - V. 82, N 4. - P. 1649—1655. 7. Bloom, S. Band structure and reflectivity of GaN / S. Bloom, G. Harbeke, E. Meier, I. B. Ortenburger // Phys. status solidi. - 1974. - V. 66. - P. 161—168. |
| Language of full-text | русский |
| Полный текст статьи | Получить |
