In this article, we consider a number of questions relating to the thermal optimization of 200 mm diameter Si Czochralski single crystal growth process using the new «Redmet-90M» puller. The article includes results of numerical heat transfer simulation taking into account special thermal shield assemblies (with and without water cooling). The effect of various crucible rotation speed on the distribution of the azimuthal velocity of the melt and on the liquid-solid interface have also been investigated.

1. Pat. RU 2355834 C1. Ustroystvo dlya vyrashchivaniya monokristallov kremniya metodom CHokhral'skogo / A. I. Prostomolotov, N. A. Verezub, V. YU. ZHvirblyanskiy, M. G. Mil'vidskiy; GNU IKHPM. Zayavl. 20.05.2009.
2. Pat. RU 2382121 C1. Ustroystvo dlya vyrashchivaniya monokristallov kremniya metodom CHokhral'skogo / A. I. Prostomolotov, N. A. Verezub, V. YU. ZHvirblyanskiy, M. G. Mil'vidskiy; GNU IKHPM. Zayavl. 20.02.2010.
3. Togawa, S. Oxygen transport from a silica crucible in Czochralski silicon growth / S. Togawa, K. Izunome, S. Kawanishi, S.— Ik. Chung, K. Terashima, S. Kimura // J. Cryst. Growth. — 1996. — V. 165. — P. 362—371.
4. Pat. US 5593498. Apparatus for rotating a crucible of a crystal pulling machine / S. I. Kimbel, H. W. Korb, C. F. Hall. 14.01.1997.
5. Polezhaev, V. I. Convection during crystal growth on Earth and in space / V. I. Polezhaev, K. G. Dubovik, S. A. Nikitin, A. I. Prostomolotov, A. I. Fedyushkin // J. Cryst. Growth. — 1981. — V. 52. — P. 465—470.
6. Svidetel'stvo o gos. reg. programm dlya EVM № 2009613989. Programma «CRYSTMO/MARC» dlya sopryazhennogo teplovogo modelirovaniya / A. I. Prostomolotov, N. A. Verezub, KH. KH. Il'yasov; OAO«Giredmet». Zayavl. 27.07. 2009.
7. Verezub, N. A. Issledovanie teploperenosa v rostovom uzle protsessa CHokhral'skogo na osnove sopryazhennoy matematicheskoy modeli / N. A. Verezub, A. I. Prostomolotov // Izv. vuzov. Materialy elektron. tekhniki. — 2000. — № 3. — S. 28—34.
8. Prostomolotov, A. I. Integrated approach for modeling of heat transfer and microdefect formation during CZ silicon single crystal growth / A. I. Prostomolotov, N. A. Verezub // Solid State Phenomena. — 2008. — V. 131/133. — P. 283—288.
9. Prostomolotov, A. I. Thermal optimization of Cz silicon single crystal growth / A. I. Prostomolotov, N. A. Verezub, M. G. Mil’vidskii // Ibid. — 2010. — V. 156/158. — P. 217—222.
10. Prostomolotov, A. I. Simplistic approach for 2D CZ grown—in microdefect modeling / A. I. Prostomolotov, N. A. Verezub // Physica status solidi (C). — 2009. — V. 6, N 8. — P. 1878—1881.