Defect formation processes have been studied for heat treatments of Cz grown single crystal silicon after thermal neutron irradiation in modes normally used for the transmutation doping of silicon ingots. Defect formation processes have been characterized using diffuse X-ray scattering and IR spectroscopy. We show that this doping changes the state of background impurities such as oxygen and carbon in the material lattice. Importantly, subsequent high temperature annealing restores the concentration of the interstitial oxygen and does not restore the concentration of the lattice site carbon. We have studied the effect of irradiation on the formation of oxygen containing microdefects in the silicon lattice during high temperature annealing in modes used for the formation of an intrinsic getter in silicon wafers.

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