The defect structure of the layer damaged by implantation with ⁶⁴Zn⁺ ions and its evolution during subsequent annealing was studied using high-resolution X-ray diffraction, SIMS and AES methods. The samples were pieces of n-type Si(001) wafer cut from a Czochralski grown ingot. The samples were implanted with ⁶⁴Zn⁺ ions at an energy of 100keV and an ion dose of 2 ⋅ 10¹⁴ cm^-2 with a subsequent annealing at 400 °C during 60 min and 700 °C during 10min. The strain and Debye—Waller depth profiles reconstructed from the diffraction patterns were analyzed. Annealing leads to significant changes of the profile shape. This change can be caused by the annihilation of the Frenkel pair components, redistribution of both radiation-induced point defects and the implanted impurity and quasi-chemical reactions between point defects and the implanted impurity. Analysis of Si(2 2 4) reciprocal space maps confirms that the damaged layer remains fully coherent to the Si matrix in the as-implanted state and after the heat treatments. Increase of X-ray diffuse scattering intensity after annealing is caused by clustering of radiation-induced point defects and implanted Zn atoms.

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