| Название |
Rare earth metal diffusion doping of silicon |
| Реферат |
We have studied the properties of silicon diffusion doped with rare earth metals (Dy, Lu, Sm, Gd, Yb, Y, Sc, Ho and Er). Diffusion was from a rare earth metal oxide film on the surface of the silicon wafer. Rare earth metal profiles in silicon surface layers have been studied with Rutherford backscattering and deuteron nuclear reaction spectroscopy. The VC characteristics, surface resistivity and carrier mobility have been measured during stepwise layer etching to determine the hole profiles in the doped silicon layers. We show that the concentration of all the rare earth elements studied in the silicon surface layers is far above the concentration of ionized acceptors. |
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