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Журналы →  Materialy Elektronnoi Tekhniki →  2011 →  №3 →  Назад

MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
Название Investigation of MCT−based quantum well structures photoluminescence spectra
Автор D. I. Gorn, A. V. Voitsekhovskii, I. I. Izhnin
Информация об авторе D. I. Gorn; A. V. Voitsekhovskii, Tomsk State University; I. I. Izhnin, NPO «Karat», Ukraine.
Реферат

Results of theoretical investigations of CdHgTe−based nanoheterostructures with single quantum wells (QW) with the well width a ≅ 12,5 nm have been presented. Calculations have been carried out for the energy−band diagram of this structure, locations of dimensional quantization levels, overlap integrals and velocities of radiative and nonradiative Auger recombination mechanisms for various types of interband transitions in the QW.
Ключевые слова Quantum well, MCT (CdxHg1−xTe), photoluminescence, energy−band diagram, dimensional quantization, lifetime, radiative recombination, Auger recombination, overlap integrals.
Библиографический список

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Language of full-text русский
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