MADI:

T. M. Tkacheva

M. N. Shakhov

NRC «Kurchatov Institute:

L. M. Ivanova

K. D. Demakov

Polycrystalline 3C−SiC films have been grown on silicon substrates by CVD method using Methyltrichlorosilane thermal dissociation in a hydrogen atmosphere at temperatures of 1000—1250 °С. The process parameters providing for the growth of homogeneous 3C−SiC layers with smooth surfaces and high adhesion have been determined. The defect structure of the silicon substrate with deposited 3C−SiC film has been investigated by X−ray topography. All the projector topographic patterns show that the elastic stress contrast inherits exactly the film morphology. The subsurface elastic stress fields in the substrate decrease with an increase in the 3C−SiC film growth temperature. We show that the 3C−SiC film heterostructure is highly sensitive to heat treatment.

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