PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
ArticleName | X−ray Topographic Study of Defects in Si−based Multilayer Epitaxial Power Devices |
ArticleAuthor | I. L. Shulpina, V. A. Kozlov |
ArticleAuthorData | Ioffe Physico–Technical Institute of Russian Academy of Sciences I. L. Shulpina
FID Technology Ltd., Power Semiconductors Ltd V. A. Kozlov |
Abstract | The defects in silicon based multilayer epitaxial structures intended for power epitaxial−diffusion devices as initial material were studied by x−ray topography techniques. It was shown the dislocation nets with non−uniform distribution of dislocations both over thickness and layer square in the form of dense rows (dislocation walls) or slip bands were principal defects in initial epitaxial layers and have influenced on electrical characteristics of power devices. |
keywords | Х−ray topography, silicon, defects, multilayer epitaxial structures, power devices, electrical characteristics |
References | 1. Antsiferov, V. N. Problemy poroshkovogo materialovedeniya. Ch. IV. Tekhnologiya proizvodstva poroshkovykh ferritovykh materialov / V. N. Antsiferov, L. M. Letyuk, V. G. Andreev, A. N. Dubrov, A. V. Gonchar, V. G. Kostishin, A. I. Satin. − Ekaterinburg: UrO RAN, 2005. − 407 s. |
Language of full-text | russian |
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