Classic Private University, Zaporozhye, Ukraine:

V. M. Ivanov, Post-graduate Student, e-mail: v.m.ivanov@rambler.ru
Yu. V. Trubitsyn, Professor

This work is devoted to the design features of the PIC-reactors of synthesis of trichlorosilane, which is used in the production of polycrystalline silicon. Trichlorosilane is produced by the hydrochlorination of technical silicon and hydrogenation of silicon tetrachloride, formed during the polysilicon production as a byproduct. Modern technologies make it possible to apply the process of hydrogenation of silicon tetrachloride to trichlorosilane, which is recycled to the production of polysilicon. There are described the known designs of PIC-reactors developed for the synthesis of trichlorosilane. In the synthesis practice the reactors with gushing bed and suspended bed have found their application. The design features of the reactors hydrochlorination of silicon and hydrogenation of silicon tetrachloride are examined. Gushing bed reactors are equipped with conical bottom with the function of the gas distributing cone, cylindrical or conical shell and expander for separation of particles, carried away by the gas stream from the reaction zone. Reactors with the suspended bed have a cylindrical or conical shell with built-in gas-distributing grid. For pre-heating of silicon load and ensuring of optimum reaction temperature the reactors can be equipped with the heaters. For the purpose of removement of heat of exothermic reactions, the heat-exchange elements are foreseen in the reactors designs. The advantages and disadvantages of the reactors designs are present taking into account their design features and operating experience. There are given the proposals for usage of reactors with gushing bed and suspended bed. There was made the conclusion that the development and implementation of the suspended bed reactor is the most reasonable for the catalytic hydrogenation, which is nowadays considered as promissing.

1. Ivanov V. M., Trubitsyn Yu. V. Novi tekhnologії — New Technologies. 2010. No. 1. pp. 53–58.
2. Falkevich E. S., Pulner E. O., Chervonnyy I. F. et al. Tekhnologiya poluprovodnikovogo kremniya (Technology of semiconductor silicon). Moscow : Metallurgiya, 1992. pp. 160–165.
3. Sivoshinskaya T. I., Grankov I. V., Shabalin Yu. P., Ivanov L. S. Pererabotka tetrakhlorida kremniya, obrazuyushchegosya v proizvodstve poluprovodnikovogo kremniya (Processing of silicon tetrachloride, obtained during the manufacturing of semiconductor silicon). Proizvodstvo redkikh metallov i poluprovodnikovykh materialov : obzornaya informatsiya (Production of rare metals and semiconductor materials : review information). Moscow : Central Scientific and Research Institute of Economics and Information of Non-ferrous Metals, 1983. 43 p.
4. Shchepelev A. V. Sposob polucheniya khlorsilanov, sposob khlorirovaniya soderzhashchego dvuokis kremniya syrya i sposob konversii tetrakhlorsilana v trikhlorsilan (Method of obtaining of chlorsilanes, method of chlorination of raw materials, which contain silicon dioxide, and method of conversion of tetrachlorosilane into trichlorosilane). Patent RF, No. 2373147. Applied: February 26, 2008. Published: November 20, 2009.
5. Raschety apparatov kipyashchego sloya : spravochnik (Calculations of apparatuses of fluidized bed : reference book). Under the editorship of I. P. Mukhlenov, B. S. Sazhin, V. F. Frolov. Leningrad : Khimiya, 1986. p. 9.
6. Arkadev A. A., Nazarov Yu. N., Kokh A. A. et al. Tsvetnye Metally — Non-ferrous metals. 2012. No. 7. pp. 62–64.
7. GOST 380–2005. Stal uglerodistaya obyknovennogo kachestva. Marki (State Standard 380–2005. Commercial quality carbon steel. Grades). Introduced: July 01, 2008.
8. P. A. Danov, A. L. Danilevskiy, L. Ya. Shvartsman et al. Reaktor s psevdoozhizhennym sloem (Fluid-bed reactor). Certificate of Authority USSR, No. 1579556. Applied: June 01, 1987. Published: July 23, 1990.
9. Ivanov V. M., Trubitsyn Yu. V. Materialy elektronnoi tekhniki – Materials of Electronic Technics. 2010. No. 4. pp. 10–13.