National Research Nuclear University «MEPhI»:

K. D. Vanyukhin

R. V. Zakharchenko

N. I. Kargin
L. A. Seidman

ITO thin films were prepared by electron beam deposition method over a range of processing conditions. The target material used in this study was an ITO pellet with a composition: In₂O₃ 90 wt% and SnO₂ 10 wt%. The evaporation conditions were: a vacuum of 5 ⋅ 10⁻⁴ or 4 ⋅ 10⁻² Pa and the rate of evaporation were controlled
within the range 0.075–0.4 nm/s. The thickness of thin film was controlled by using a quartz crystal thickness monitor, resulting in films having 200 nm. After the deposition, the samples were annealed in a thermal annealing furnace in air or nitrogen at 300−700 ^оC for 30 s. Experiments aimed at choosing the optimal atmosphere for annealing the films yielded the different results. Indium tin oxide coatings properties were researching as a function of the deposition atmosphere and conditions of a thermal annealing. The ITO films deposited and annealed under the optimized conditions work well as the transparent conducting electrode in the light emitting diodes based on GaN.

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