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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName Formation and Structure of Mesoporous Silicon
ArticleAuthor N. I. Kargin, A. O. Sultanov, A. V. Bondarenko, V. P. Bondarenko, S. V. Redko, A. S. Ionov
ArticleAuthorData

National Research Nuclear University MEPhI

N. I. Kargin

A. O. Sultanov

 

Belarusian State University of Informatics and Radioelectronics:

A. V. Bondarenko

V. P. Bondarenko

S. V. Redko

 

OJSC «OKB−Planeta»:

A. S. Ionov

Abstract

This article presents research results on the formation kinetics and structure of mesoporous silicon layers synthesized by electrochemical anodic treatment in an electrolyte based on a 12 % aqueous solution of hydrofluoric acid. The electrolyte consisted only of deionized water and hydrofluoric acid and contained no organic additives thus avoiding carbon contamination of the porous silicon during anodic treatment. Another distinguishing feature of the work is that all the experiments were conducted for whole silicon wafers 100 mm in diameter rather than for small size samples often used to save silicon. The initial substrates were single crystal silicon wafers brand IES −0,01 cut from Czochralski grown ingots. The thickness of the porous silicon layers, its growth rate and the bulk porosity of porous silicon were estimated as functions of anodic current density and anodic treatment time. The structure of the porous silicon layers and the size and the density of the pore channels investigated using SEM. We found optimum treatment modes allowing one to obtain homogeneous porous silicon layers for subsequent use as buffer layers for epitaxy.

keywords Porous silicon, buffer layer, electrochemical anodic treatment, current density, porosity.
References

1. Labunov, V. A. Poristyi kremnii v poluprovodnikovoi elektronike / V. A. Labunov, V. P. Bondarenko, V. E. Borisenko // Zarubezhnaya elektronnaya tehnika. − 1978. − N 15. − P. 3—47.
2. Canham, L. T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers / L. T. Canham // Appl. Phys. Lett. − 1990. − V. 57. − P. 1046—1048.
3. Bomchil, G. Porous silicon: the material and its application in silicon−on−insulator technologies / G. Bomchil, A. Halimaoui, R. Herino // Appl. Surf. Sci. − 1989. − V. 41/42. − P. 604—613.
4. Properties of porous silicon / Ed. by L. Canham. − Malvern : DERA, 1997. − 400 p.
5. Balagurov, L. A. Poristyi kremnii. Poluchenie, svoistva, vozmozhnye primeneniya / L. A. Balagurov // Materialovedenie. − 1998. − Iss. 1. − P. 50—56. − Iss. 3. − P. 23—45.
6. Shengurov, V. G. Vyrashivanie metodom MLE gomoepitaksial’nyh sloev kremniya na poverhnosti poristogo kremniya posle nizkotemperaturnoi ochistki ee v vakuume / V. G. Shengurov, V. N. Shabanov, N. V. Gudkova, B. Ya. Tkach // Mikroelektronika. − 1993. − V. 22, Iss. 1. − P. 19—21.
7. Naderi, N. Nanocrystalline SiC sputtered on porous silicon substrate after annealing / N. Naderi, M. Hashim // Mater. Lett. − 2013. − V. 97. − P. 90—92.
8. Saravanan, S. Growth and characterization of GaAs epitaxial layers on Si/porous silicon/ Si substrates by chemical beam epitaxy / S. Saravanan, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno, N. Sato, T. Yonehara // J. Appl. Phys. − 2001. − V. 89. − P. 5215—5218.
9. Bondarenko, V. P. Geteroepitaksiya sul’fida svintsa na kremnii / V. P. Bondarenko, N. N. Vorozov, V. V. Dikareva, A. M. Dorofeev, V. I. Levchenko, L. I. Postnova, G. N. Troyanova // Pis’ma v ZhTF. − 1994. − V. 20, Iss. 10. − S. 51—54.
10. Levchenko, V. Heteroepitaxy of PbS on porous silicon / V. Levchenko, L. Postnova, V. Bondarenko, N. Vorozov, V. Yakovtseva, L. Dolgyi // Thin Solid Films. − 1999. − V. 348. − P. 141—144.
11. Yakovtseva, V. Porous silicon: a buffer layer for PbS heteroepitaxy / V. Yakovtseva, N. Vorozov, L. Dolgi, V. Levchenko, L. Postnova, M. Balucani, V. Bondarenko, G. Lamedica, V. Ferrara, Ferrari A. // Phys. status solidi (a). − 2000. − V. 182. − P. 195—199.

12. Belyakov, L. V. Issledovanie IK fotodiodov na osnove PbTe, poluchennyh na bufernom podsloe poristogo kremniya / L. V. Belyakov, I. B. Zaharova, T. I. Zubkova, S. F. Musihin, S. A. Rykov // FTP. − 1997. − V 31.− P. 93—95.
13. Chang, C. Characterization and fabrication of ZnSe epilayer on porous silicon substrate / C. Chang, C. Lee // Thin Solid Films. − 2000. − V. 379. − P. 287—291.

14. Ishikawa, H. MOCVD growth of GaN on porous silicon substrates / H. Ishikawa, K. Shimanaka, F. Tokura, Y. Hayashi, Y. Hara, M. Nakanishi // J. Cryst. Growth. − 2008. − V. 310. − P. 4900—4903.
15. Halimaoui, A. Influence of wettability on anodic bias induced electroluminescence in porous silicon / A. Halimaoui // Appl. Phys. Lett. − 1993. − V. 63. − P. 1264—1266.

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