MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS | |
ArticleName | Formation and Structure of Mesoporous Silicon |
ArticleAuthor | N. I. Kargin, A. O. Sultanov, A. V. Bondarenko, V. P. Bondarenko, S. V. Redko, A. S. Ionov |
ArticleAuthorData | National Research Nuclear University MEPhI N. I. Kargin A. O. Sultanov
Belarusian State University of Informatics and Radioelectronics: A. V. Bondarenko V. P. Bondarenko S. V. Redko
OJSC «OKB−Planeta»: A. S. Ionov |
Abstract | This article presents research results on the formation kinetics and structure of mesoporous silicon layers synthesized by electrochemical anodic treatment in an electrolyte based on a 12 % aqueous solution of hydrofluoric acid. The electrolyte consisted only of deionized water and hydrofluoric acid and contained no organic additives thus avoiding carbon contamination of the porous silicon during anodic treatment. Another distinguishing feature of the work is that all the experiments were conducted for whole silicon wafers 100 mm in diameter rather than for small size samples often used to save silicon. The initial substrates were single crystal silicon wafers brand IES −0,01 cut from Czochralski grown ingots. The thickness of the porous silicon layers, its growth rate and the bulk porosity of porous silicon were estimated as functions of anodic current density and anodic treatment time. The structure of the porous silicon layers and the size and the density of the pore channels investigated using SEM. We found optimum treatment modes allowing one to obtain homogeneous porous silicon layers for subsequent use as buffer layers for epitaxy. |
keywords | Porous silicon, buffer layer, electrochemical anodic treatment, current density, porosity. |
References | 1. Labunov, V. A. Poristyi kremnii v poluprovodnikovoi elektronike / V. A. Labunov, V. P. Bondarenko, V. E. Borisenko // Zarubezhnaya elektronnaya tehnika. − 1978. − N 15. − P. 3—47. 12. Belyakov, L. V. Issledovanie IK fotodiodov na osnove PbTe, poluchennyh na bufernom podsloe poristogo kremniya / L. V. Belyakov, I. B. Zaharova, T. I. Zubkova, S. F. Musihin, S. A. Rykov // FTP. − 1997. − V 31.− P. 93—95. 14. Ishikawa, H. MOCVD growth of GaN on porous silicon substrates / H. Ishikawa, K. Shimanaka, F. Tokura, Y. Hayashi, Y. Hara, M. Nakanishi // J. Cryst. Growth. − 2008. − V. 310. − P. 4900—4903. |
Language of full-text | russian |
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