National Center for Physics of Particles and High Energies, Belarus State University, Republic of Belarus:

Yu. A. Fedotova

Belarus State University, Republic of Belarus:

D. K. Ivanov

Yu. A. Ivanova

A. V. Mazanik

I. A. Svito

E. A. Streltsov

A. K. Fedotov

Al−Balqa Applied University, Jordan:

A. Saad

Joint Institute for Nuclear Research:
S. I. Tyutyunnikov

P. Yu. Apel

We show that the magnetoresistive properties of n−Si/SiO₂/Ni nanostructures containing nanogranular nickel pillars in verticals pores of the SiO₂ layer differ considerably from those properties of previously studied nanogranular Ni films electrodeposited onto n−Si wafers. The electrophysical properties of these nanostructures are similar to those of a system consisting of two opposite−connected Si/Ni Shottky diodes. We studied the magnetoresistance of these structures in the 2—300 K temperature range and in magnetic fields of up to 8 Tl. The studies suggest that at 17—27 K the structures have a positive magnetoresistive effect the magnitude of which depends on the transverse bias applied to the structure and increases with a decrease in the longitudinal current (along the pillars). At 100 nA current, the relative magnetoresistance in a 8 Tl field increased by 500 to 35,000% as the transverse bias varies from 0 to −2 V. The magnetoresistive effect observed in the structures is likely to be related to the effect of the magnetic field on the impact ionization of the impurities causing an avalanche breakdown of the Si/Ni Shottky diode. We prove the possibility of controlling the magnetoresistive effect in n−Si/SiO₂/Ni template structures by applying an additional (transverse) electric field to the nanostructure between the silicon substrate (functioning as the third electrode) and the nickel nanopillars

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