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EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS
ArticleName Degradation of Three–Junction Amorphous Si : H Based Solar Cells
ArticleAuthor V. N. Murashev, S. A. Legotin, A. A. Krasnov, A. A. Dudkin, D. A. Zezin
ArticleAuthorData

National University of Scienceand Technology MISIS:

V. N. Murashev

S. A. Legotin

A. A. Krasnov

 

KVANT Research and Production Enterprise:

A. A. Dudkin

 

National Research University Moscow Energy Institute:

D. A. Zezin

Abstract

The operating experience of hydrogenated amorphous silicon (a−Si : H) based solar cells has shown that besides their low efficiency this type of photovoltaics degrade much faster compared to single crystal based solar cells. As far as the processes determining the degradation of amorphous materials based solar cells are not well studied, and the degradation of similar cells without light exposure has also been reported, we conducted an experiment to compare the temporal change characteristics of main solar cell parameters in darkness and under natural light. The demonstration of short circuit current reduction in darkness aged solar cells should be considered as one of the most interesting results of the work. Moreover we have shown that the change of this parameter is on average the same for the illuminated cells, while for some cells short circuit current reduction is substantially higher. This is indicative of the fact that the observed effect is not related to the Staebler—Wronski effect.

keywords Solar cell degradation, thin film solar cells, hydrogenated amorphous silicon, a−Si:H, dispersion curves, Staebler–Wronski effect
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