Zaporizhstal Integrated Iron & Steel Works JSC, Ukraine:

S. V. Bytkin

Zaporozhye State Engineering Academy, Ukraine:

T. V. Kritskaya

National University of Science and Technology MISIS:

S. P. Kobeleva

The characteristics of low−power and high−power thyristors basen of dislocation−free single crystal silicon doped with germanium to the concentration range N_Ge ~ (0.05—1.5) · 10²⁰ cm⁻³ have been investigated. The criterial parameters of thyristors exposed to radiation and high temperature gradients have been estimated using experimental data processing methods in the STATISTICA and MathCAD environments. We show the appropriateness of using germanium doped silicon for increasing the thermal stability and radiation strength of the devices exposed to γ−radiation in the range of doses of up to 2.94 · 10⁶ mSv.

1. Catrene scientific committee eorking group: Integrated power & energy efficiency [Elektronnyi document] (http://www.catrene.org/web/downloads/IPEE_Report_by_Catrene%20Sci._Comm.pdf).
2. Weigel, W.−D. Moderne drehstromantriebstechnik — stand und perspektiven / W.−D. Weigel // ZEVrail Glasers Annalen (Tagungsband SFT Graz). − 2002. − P. 112—125.
3. Kaminski, N. Vozdeistvie kosmicheskogo izlucheniya na intensivnost‘ otkazov IGCT [Elektronnyi document] / N. Kaminski, A. Chekmarev, I. Korzina, T. Styasni // Silovaya elektronika. − 2008. − N 1. − P. 30—32 (http://www.power−e.ru/2008_1_30.php).
4. O Federal‘noi celevoi programme «Nacional‘naya tehnologicheskaya baza» na 2007—2011 gody (v red. Postanovleniya Pravitel‘stva RF ot 26.11.2007 N 809). [Elektronnyi document] (http://www.intpark.noolab.ru/uploads/1245030251.doc).
5. Kritskaya, T. V. Upravlenie svoistvami i razrabotka promyshlennoi tehnologii monokristallicheskogo kremniya dlya elektroniki i solnechnoi energetiki: Diss. d−ra. tehn. n. − Zaporozh’e, 2006. − 375 p.
6. Bytkin, S. V. Silicon doped with germanium (n−Si<Ge>) usage for manufacturing of radiation hardened devices and integrated circuits. / S. V. Bytkin // Fourth Europ. Conf. on Radiation and Its Effects on Components and Systems Proceedings. − Cannes (France), 1997. − P. 141—146.
7. Bytkin, S. V. Materialy i processy v tehnologii kremnievyh priborov, ustoichivyh k deistviyu ioniziruyushih izluchenii: analiz effektivnosti primeneniya / S. V. Bytkin, O. V. Bytkina − Zaporozh’e : Izd−vo ZGIA, 1997. − 84 p.
8. Bytkin, S. V. Radiacionnaya stoikost’ planarnyh n—p—n−struktur, izgotovlennyh iz monokristallov kremniya s razlichnoi koncentraciei germaniya / S. V. Bytkin, T. V. Kritskaya // Skladni sistemi i procesi − 2003. − N 2. − P. 90—96.

9. Barabash L. I. Сучасні методи підвищення радіаційної стійкості напівпровідникових матеріалів / L. I. Barabash, I. M. Vishnevs'kii, A. A. Groza, A. Ya. Karpenko, P. G. Litovchenko, M. I. Starchik // Voprosy atomnoi nauki i tehniki. Ser. 90: Fizika radiacionnyh povrezhdenii i radiacionnoe materialovedenie. − 2007. − N 2. − P. 182—189.
10. Defense technology strategy for the demands of the 21^st century [Elektronnyi document] (http://www.science.mod.uk/modwww/content/dts_complete.pdf).
11. Borovikov, V. STATISTICA. Iskusstvo analiza dannyh na komp‘yutere. Dlya professionalov / V. Borovikov. − SPb. : Piter, 2003. − 688 p.
12. Kudryavcev, V. M. Mathcad 11: Polnoe rukovodstvo po russkoi versii. / V. M. Kudryavcev − M. : DMK Press, 2005. − 592 p.
13. Gerlah, V. Tiristory / V. Gerlah − M. : Energoatomizdat, 1985. − 345 p.
14. Kritskaya, T. V. Uprugie napryazheniya v kremnii s vnutrennimi getterami / T. V. Kritskaya, V. E. Kustov, N. A. Tripachko, V. I. Shahovcov // Elektronnaya tehnika. Ser. Materialy. − 1989. − Iss. 4 (241). − P. 41—43.
15. Kritskaya, T. V. Osobennosti spektrov IK−poglosheniya termodonorov v kristallah Si : Ge / T. V. Kritskaya, L. I. Hirunenko, V. I. Shahovcov, V. I. Yashnik // FTP. − 1990. − T. 24, Iss. 6. − P. 1129—1132.
16. Kustov, V. E. Vnutrennie uprugie deformacii v kremnii / V. E.Kustov, T. V. Kritskaya, N. A. Tripachko, L. I. Hirunenko, V. I. Shahovcov, V. I. Yashnik // Neorgan. materialy. − 1991. − N 6. − P. 1116—1118.
17. Khirunenko, L. I. Oxygen in silicon doped with isovalent impurities. / L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, V. K. Shinkarenko // Physica B. − 1999. − V. 273−274. − P. 317—321.