National Research University Higher School of Economics:

V. A. Golubiatnikov

F. I. Grigor’ev

A. P. Lysenko
N. I. Strogankova

M. B. Shadov

Joint Stock Company «Giredmet»:

A. G. Belov
V. E. Kanevsky

The method of separate determination of two−pole sample volume resistance and contact resistance is suggested. The method described is applicable to high−ohmic semiconductor samples: semiinsulating gallium arsenide, detector cadmium−zinc telluride (CZT), etc. The method is based on near−contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energy exceeding band gap width of investigated material. It is necessary to obtain sample photo−current dependence upon light emitting diode current and to find the straight−line part of this dependence. The extrapolation of this linear part to ordinate axis gives cut−off current value. As bias voltage is known, it is easy to calculate sample volume resistance value. Afterwards, using dark current value, it is possible to determine total contact resistance. The method was approbated on n−type semiinsulating GaAs sample. Contact resistance value was shown to be approximately equal to sample volume resistance. It means that influence of contacts must be taken into account when electrophysical data is analyzed.

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