Ural Federal University named after the first President of Russia B. N. Yeltsin, Ekaterinburg, Russia:

S. S. Tulenin, Post-Graduate Student, e-mail: stast1989@mail.ru
V. F. Markov, Head of a Chair of Physical and Colloid Chemistry

Ural Institute of State Fire Service of the Russian Emergencies Ministry, Ekaterinburg, Russia:
L. N. Maskaeva, Professor

Nanocrystalline indium (III) sulfide in film and powder state was synthesized in thermostatic conditions (353 K) by hydrochemical sedimentation from the solution, containing indium (III) salt, tartaric acid, sulfuric acid hydroxylamine and acetothioamide. According to interferention microscopy data, thickness of obtained nanocrystalline layers was 3400±100 nm. X-ray diffraction defined the cubic structure (I41/amd — D194h) of In₂S₃ films with constant crystalline grade, equal to 1.0734 nm. Scanning electron microscopy defined that indium (III) sulphide in powder type consists of spherical aggregates with diameter from 0.3 to 5.5 m, formed by flat crystallites (near 30 nm). Films are formed from fibriform (40–70 nm). Element energy-dispersion microanalysis defined that powder In₂S₃ is lessconcentrated by oxygen (5.9%(at.)), than films' sample (8.0%(at.)), which is connected with larger sizes of powder agglomerates. Elemental analysis of fine-film indium (III) sulfide defined the increasing of oxygen content with thermal annealing in the temperature range of 275–495 ^оC from 8.5 to 67.8%(at.) with simultaneous decrease of sulfur content from 53.3 to 5.5%(at.). Thermal-gravimetric analysis in the medium of argon defined the stability of powder In₂S₃ to 300 ^оC to thermal destruction. There was defined the temperature of phase transfer of nanopowder from α-In₂S₃ in -modification, equal to 301 ^оC. There was made a definition that beginning of thermal-oxidation destruction corresponds to the temperature of 330 ^оC. Differential-thermal analysis defined that in the process of thermal destruction of In₂S₃ during 330 ^оC heating, indium (III) sulfide oxidates constantly till 500 ^оC with formation of indium (III) oxide, sulfur (IV) oxide and indium (III) sulfate. Total loss of mass in samples after heating up to 600 ^оC was near 14.9%.
This work was supported by the Ministry of Education and Science of Russian Federation within the State Task No. 4.1270.2014/K, Program 211 of the Government of Russian Federation No. 02.A03.21.0006 and grant of Russian Foundation for Basic Research No. 14-03-00121.

1. John T. T., Kartha C. S., Vijayakumar K. P., Abeb T., Kashiwaba Y. Spray pyrolyzed α-In₂S₃ thin lms: effect of postdeposition annealing. Applied Physics A. 2006. Vol. 82. p. 703–707.
2. Bodnar I. V., Polubok V. A., Rud V. Yu., Rud Yu. V. Fotochuvstvitelnye struktury na kristallakh In₂S₃ (Photosensitive structures on In₂S₃ crystals). Fizika i tekhnika poluprovodnikov = Physics and technics of semiconductors. 2003. Vol. 37, No. 11. pp. 1346–1348.
3. Bodnar I. V., Polubok V. A., Gremenok V. F., Rud V. Yu., Rud Yu. V. Barery Shottki na osnove plenok n-In2S3, poluchennykh lazernym ispareniem (Schottky barriers on the basis of the films n-In2S3, obtained by laser evaporation). Fizika i tekhnika poluprovodnikov = Physics and technics of semiconductors. 2007. Vol. 41, No. 1. pp. 48–52.
4. Bai H. X., Zhang L. X., Zhang Y. C. Simple synthesis of urchin-like In₂S₃ and In₂O₃ nanostructures. Materials letters. 2009. No. 63. pp. 823–825.
5. Zhiwei L., Xiaojun T., Zhishen W., Pingyu Z., Zhijun Z. Preparation of In₂S₃ nanopraricle by ultrasonic dispersion and its tribology property. Ultrasonics Sonochemistry. 2009. Vol. 16. pp. 221–224.
6. Tulenin S. S., Bakhteev S. A., Yusupov R. A., Maskaeva L. N., Markov V. F. Diagrams of the formation of In₂S₃ and In₂Se₃ films on vitroceramic upon precipitation, according to potentiometric titration. Russian Journal of Physical Chemical A. 2013. Vol. 87, No. 10. pp. 1771–1777.
7. Chen L., Lan W., Lin R., Shen H., Chen H. Optical properties of In₂O₃ oxidized from InN deposited by reactive magnetron sputtering. Applied Surface Science. 2006. Vol. 252. pp. 8438–8441.
8. Busev A. I. Analiticheskaya khimiya indiya (Analytical chemistry of indium). Moscow : Academy of Sciences of USSR, 1958. 244 p.
9. Korovin S. S. Redkie i rasseyannye elementy. Khimiya i tekhnologiya (Rare and scattered elements. Chemistry and technology). Moscow : MISiS, 1969. 376 p.
10. Markov V. F., Tulenin S. S., Maskaeva L. N., Kuznetsov M. V., Barbin N. M. Composition and submicron structure of chemically deposited Cu₂Se – In₂Se₃ films. Technical Physics Letters. 2012. Vol. 38, No. 3. pp. 290–293.
11. Fedorov P. I., Mokhosoev M. V., Alekseev F. P. Khimiya galliya, indiya i talliya (Chemistry of gallium, indium and thallium). Novosibirsk : Nauka, 1977. 224 p.
12. White R., Thomas P. S., Philips M. R., Wuhrer R., Guerbois J. P. TG-MS characterization of the reaction products of yellow and malachite artist's pigments. Journal of Thermal Analysis and Calorimetry. 2007. Vol. 88, No. 1. pp. 181–184.
13. Duval C. Inorganic termogravimetric analysis. London : Elsevier, 1953. 722 p.