The manufacturing methods of power rectifier diodes on nonplanar silicon which have various sphere of application is developed in National University of Science and Technology “MISIS”. With a view of commercialization of manufacturing methods there was a task in view of rating of its market value. The preliminary technical and economical assessment of the production project of power rectifier diodes on nonplanar silicon has been spent for an estimation of cash flows from realization of production on the basis of this manufacturing methods. Calculations have shown, that the market value of the technology confirmed with patents, even at usage of developed manufacturing methods on the scale of 5 % of the domestic market of power rectifier diodes on nonplanar silicon makes 16,0 million roubles. and it exceeds the considered settlement expenses for its realization in 2–3 times.