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ArticleName An influence of glow discharge hydrogen plasma treatment on structure properties of thin SnOx and SiC1.4 films
ArticleAuthor Beisenkhanov N. B.

In this paper, an influence of processing in glow discharge hydrogen plasma on structure properties of SiC1.4 and SnOx thin films is investigated. SiC1.4 layer formed by multiple implantation of carbon ions with energies 40, 20, 10, 5 and 3 keV into silicon substrate. It was found that the processing in hydrogen plasma has led in complete disintegration of silicon crystallites in transition layer “film — substrate” (“SiC–Si”) and to structure disordering of the silicon carbide crystallites in SiC1.4 layer. SnOx films of thickness ~350 nm have deposited by magnetron sputtering in Ar–O2 atmosphere on glass substrate. It is shown that phase composition and structure of SnOx films essentially depend on pressure of Ar–O2 mixture in chamber ranged 1–2,7 Па. Various influence of hydrogen and oxygen plasmas on both segregation and disintegration processes of polycrystalline phases in SnOx films is shown. It is shown, that the action of hydrogen plasma is spread to all depth of films (~200–300 nm), causing decay of crystal grains of silicon or tin oxide. The penetration of a quantity of hydrogen ions of plasma through a solid film guesses saturation of film material by hydrogen.

keywords Thin films, glow discharge hydrogen plasma; silicon carbide, ion implantation, tin oxides, magnetron sputtering.
Language of full-text russian
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