Specimens of GaAs detectors with various types of potential barriers have been fabricated. The high resistance working 40–45 μm n-layers with carrier concentrations of less than 10¹² cm^-3 have been grown by vapor phase epitaxy in a chloride transport system. The research results for the of a α-, β-, γ-source spectra measured by the detectors have been presented, a high quality of the test material for detector applications has been demonstrated and ways of further optimization of detectors on VPE-GaAs have been determined.

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