• Acquire
Hide↑
Journals →  Materialy Elektronnoi Tekhniki →  2010 →  #4 →  Back

Atomic structures and methods of structural investigations
ArticleName Effect of thermal neutron irradiation on the decomposition of oxygen solid solution in silicon
ArticleAuthor K. N. Enisherlova, V. T. Bublik, K. D. Scherbachev, M. I. Voronova, E.M. Temper
ArticleAuthorData K. N. Enisherlova, National Research University «MISiS»; V. T. Bublik, K. D. Scherbachev, M. I. Voronova, FGUP NPP Pulsar; E.M. Temper, National Research University «MISiS»
Abstract
Defect formation processes have been studied for heat treatments of Cz grown single crystal silicon after thermal neutron irradiation in modes normally used for the transmutation doping of silicon ingots. Defect formation processes have been characterized using diffuse X-ray scattering and IR spectroscopy. We show that this doping changes the state of background impurities such as oxygen and carbon in the material lattice. Importantly, subsequent high temperature annealing restores the concentration of the interstitial oxygen and does not restore the concentration of the lattice site carbon. We have studied the effect of irradiation on the formation of oxygen containing microdefects in the silicon lattice during high temperature annealing in modes used for the formation of an intrinsic getter in silicon wafers.
keywords Oxygen solid solution in silicon, decomposition, microdefects, irradiation, thermal neutrons, heat treatment.
References
1. Chtcherbatchev, K. D. Microdefects in semiconductor single crystals revealed by the X—ray diffuse scattering method / K. D. Chtcherbatchev, V. T. Bublik // Inst. Phys. Conf. Ser. — 1997. — V. 160. — P. 187—190.
2. Dolgolenko, A. P. Radiatsionnaya stoykost' n— i p—Si, legirovannogo kislorodom i germaniem, pri obluchenii vysokoenergeticheskimi yadernymi chastitsami / A. P. Dolgolenko, G. P. Gaydar, M. D. Varentsov // Voprosy atomnoy nauki i tekhniki. ser. Fizika radiatsionnykh povrezhdeniy i radiatsionnoe materialovedenie. — 2009. — T. 93, № 2. — S. 151—157.
3. SHlimak, I. S. Neytronnoe transmutatsionnoe legirovanie poluprovodnikov: nauka i prilozheniya / I. S. SHlimak // FTT. — 1999. — T. 41, vyp. 5. — S. 794—798.
4. Bublik, V. T. Issledovanie osobennostey obrazovaniya mikrodefektov v termicheski obrabotannykh bezdislokatsionnykh plastinakh kremniya bol'shogo diametra metodom diffuznogo rasseyaniya rentgenovskikh luchey / V. T. Bublik, S. YU. Matsnev, K. D. SHCHerbachev, M. V. Mezhennyy, M. G. Mil'vidskiy, V. YA. Reznik // Fizika tverdogo tela. — 2003. — T. 45, vyp. 10. — S. 1825—1832.
5. Mordkovich, V. N. / V. N. Mordkovich, E. M. Temper // Fizika i tekhnika poluprovodnikov. — 1980. — T. 14, № 11. — S. 2172—2177.
6. Bublik, V. T. Effect of doping and low—temperature annealing on generation of microdefects in Czochralski—grown silicon single crystals studied by X—ray diffuse scattering / V. T. Bublik, N. M. Zotov // Crystallography Rep. — 1999. — V. 44, N 4. — P. 635—639.
Language of full-text russian
Full content Buy
Back