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| PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
| ArticleName | Photoreflectance diagnostics of gallium arsenide |
| ArticleAuthor | O. S. Komkov, A. N. Pikhtin, Yu.V. Zhilyaev |
| ArticleAuthorData | O. S. Komkov, A. N. Pikhtin, St. Petersburg Electrotechnical University «LETI»; Yu.V. Zhilyaev, A. F. Ioffe Physico−Technical Institute, Russian Academy of Sciences |
| Abstract | A contactless and nondestructive diagnostics method for bulk GaAs crystals and epitaxial layers with different doping levels has been implemented. The method is based on the measurement and analysis of photomodulated reflectance spectra, i.e. photoreflectance. The surface electric field and the corresponding free carrier concentration have been determined. The results are a in good agreement with independent Hall measurements. |
| keywords | Physics of semiconductors, gallium arsenide, optical investigation methods, modulation spectroscopy, photoreflectance. |
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| Language of full-text | russian |
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