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MODELING OF PROCESSES AND MATERIALS
ArticleName Phosphorus diffusion in germanium at the InGaP/Ge heterostructure boundary
ArticleAuthor S. P. Kobeleva, D. A. Kuzmin, S. Yu. Yurchuk, V. N. Murashev, I. M. Anfimov, I. V. Schemerov, V. B. Zhalnin
ArticleAuthorData S. P. Kobeleva, D. A. Kuzmin, S. Yu. Yurchuk, V. N. Murashev, I. M. Anfimov, I. V. Schemerov, National University of Science and Technology «MISIS»; V. B. Zhalnin, Kvant Research and Production Union.
Abstract

Phosphorus diffusion profiles in germanium have been calculated using different models some of which take into account the effect of multiply charged vacancies and field effects. Diffusion profile calculation results have been compared with the experimental data on the depth of the p—n junction in a single−stage solar cell based on the InGaP/Ge structure. We show that the existing models can be applied to this type of structures for making rough estimates only, whereas more accurate diffusion profile calculations require adapting the diffusion model for specific heterostructure synthesis conditions.
keywords Phosphorous diffusion in germanium, diffusivity, multicascade solar sells.
References

1. Mintairov, S. A. Issledovanie diffuzionnykh dlin neosnovnykh nositeley zaryada v fotoaktivnykh sloyakh mnogoperekhodnykh solnechnykh elementov / S. A. Mintairov, V. M. Andreev, V. M. Emel'yanov, N. A. Kalyuzhnyy, N. K. Timoshina, M. Z. Shvarts, V. M. Lantratov // FTP. - 2010. - T. 44, vyp. 8. - S. 1118—1123.
2. Karm, N. H. Future technology pathways of terrestrial III—V multijunction solar cells for concentrator photovoltaic systems / N. H. Karm // Solar Energy Materials and Solar Cells. - 2010. - V. 94, Iss. 8. - P. 1314—1318.
3. Janke, C. Ab initio investigation of phosphorus diffusion paths in germanium / C. Janke, R. Jones, S. Öberg, P. R. Briddon // Physical Rev. B. - 2008. - V. 77. - P. 195210.
4. Brotzmann, S. Intrinsic and extrinsic diffusion of phosphorus, arsenic and antimony in germanium / S. Brotzmann, H. Bracht // J. Appl. Phys. - 2008. - V. 103. - P. 033508.
5. Bracht, H. Diffusion and doping issues in germanium / H. Bracht, S. Schneider, R. Kube // Microelectronic Engi. - 2010. - V. 88, Iss. 4. - P. 452—457.
6. Canneaux, T. Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration / T. Canneaux, D. Mathiot, J. -P. Ponpon, Y. Leroy // Thin Solid Films. - 2010. - V. 518. - P. 2394—2397.
7. Maller, R. Elementy integral'nykh skhem / R. Maller, T. Keymins - M. : Mir, 1989. - 630 s.
8. Boltaks, B. I. Diffuziya i tochechnye defekty v poluprovodnikakh / B. I. Boltaks - L. : Nauka, 1972. - 384 s.
9. MOP-SBIS: Modelirovanie elementov i tekhnologicheskikh protsessov / Pod. red. P. Antonetti, D. Antoniadisa, R. Dattona, U. Ouldkhema. - M. : Radio i svyaz', 1988. - 496 s.
10. Samarskiy, A. A. Vvedenie v chislennye metody / A. A. Samarskiy. - SPb. : Lan', 2005.
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