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MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS
ArticleName Investigation of MCT−based quantum well structures photoluminescence spectra
ArticleAuthor D. I. Gorn, A. V. Voitsekhovskii, I. I. Izhnin
ArticleAuthorData D. I. Gorn; A. V. Voitsekhovskii, Tomsk State University; I. I. Izhnin, NPO «Karat», Ukraine.
Abstract

Results of theoretical investigations of CdHgTe−based nanoheterostructures with single quantum wells (QW) with the well width a ≅ 12,5 nm have been presented. Calculations have been carried out for the energy−band diagram of this structure, locations of dimensional quantization levels, overlap integrals and velocities of radiative and nonradiative Auger recombination mechanisms for various types of interband transitions in the QW.
keywords Quantum well, MCT (CdxHg1−xTe), photoluminescence, energy−band diagram, dimensional quantization, lifetime, radiative recombination, Auger recombination, overlap integrals.
References

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