PHYSICAL CHARACTERISTICS AND THEIR STUDY | |
ArticleName | Electron emission during reactive ionbeam etching of materials for electronic engineering |
ArticleAuthor | G. D. Kuznetsov, A. S. Kurochka, A. A. Sergienko, S. P. Kurochka |
ArticleAuthorData | G. D. Kuznetsov, National Research Technological University «MISiS»; A. S. Kurochka, OAO «FZMT»; A. A. Sergienko; S. P. Kurochka, National Research Technological University «MISiS». |
Abstract | Results on secondary electron current during reactive ion beam etching of various materials have been presented. Theoretical and experimental values of secondary electron current as a function of plasma−forming medium composition, target atomic number, ion energy and ion flux have been provided. A secondary electron emission model has been suggested that takes into account the peculiarities of electron emission in cases when reactive gases are used. |
keywords | Ion−electron emission; reactive ion beam etching; secondary electron current; control of the etching process. |
References | 1. Sergienko, A. A. Ispol'zovanie ionno-elektronnoy emissii dlya kontrolya protsessa ionno-luchevogo travleniya sloistykh geterokompozitsiy / A. A. Sergienko, S. B. Simakin, G. D. Kuznetsov, B. A. Bilalov, R. Sh. Teshev // Materialy IV rossiysko-yaponskogo seminara «Perspektivnye tekhnologii i oborudovanie dlya materialovedeniya, mikro- i nanoelektroniki». - M.: MGIU, 2006. - S. 285—290. |
Language of full-text | russian |
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