Tomsk State University

A. V. Voitsekhovskii

Peter the Great Academy of the Strategic Missile Force

N. Kh. Talipov

The feature of distribution of a donor−like centers in the ion implanted p−Hg_1−xCd_xTe (MCT) bulk crystals and geterostructures, grown by molecular beam epitaxy (MBE) is presented. Boron ion implantation was performed in a wide range of doses, energies and current densities. Either abrupt n⁺/p–junction or n⁺/n⁻/p–structures were formed both bulk crystals and geteroepitaxial layers depending on the implantation regimes and composition of MBE MCT. A model of the deep converted layers formation during ion implantation into the MCT was developed. The experimental validation of a model was carried out.

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