Technological Institute of Superhard and New Carbon Materials

S. V. Prokudin, A. S. Useinov

Instrumented indentation is a very promising technique for studying structural phase transitions in crystalline materials such as silicon. In the present work silicon samples with different crystallographic orientations and doping rates were investigated using indentation with a pyramid indentor of Berkovich type. For studying the electrical properties the indentor was made of semiconductor boron−doped single crystalline diamond. For verification of structural transitions in silicon Raman spectroscopy technique was applied. Electrical current through the contact area under the indentor was measured simultaneously with recording the mechanical response of the material during the indentation process. It is shown that variation in current value gives additional information about the conditions of contact between the indentor and the sample surface. The influence of variations in resistivity and contact area on the measured electrical current value is discussed.

1. Lebedenko, I. Yu. Issledovanie nanomekhanicheskikh svoystv zubnoy emali / I. Yu. Lebedenko, S. D. Arutyunov, S. A. Muslov, A. S. Useinov // Kafedra. − 2009. − № 32. − S. 24—28.
2. Useinov, A. Mekhanicheskie svoystva sverkhtonkikh uglerodnykh almazopodobnykh pokrytiy / A. Useinov, K. Gogolinskiy // Nanoindustriya. − 2010. − № 5. − S. 54—56.
3. Gogolinskiy, K. V. Otsenka izgibnoy zhestkosti i deformatsii mikrorazmernykh ispolnitel'nykh elementov ustroystv mikrosistemnoy tekhniki / K. V. Gogolinskiy, A. A. Zhukov, A. V. Kapustyan, V. A. Koroleva, A. S. Useinov // Nano− i mikrosistemnaya tekhnika. − 2011. − № 1. − S. 39—42.
4. Domnic, V. Phase transformations in silicon under contact loading / V. Domnic, Y. Gogotsi // Reviewers on advanced materials science. − 2002. − N 3. − P. 1—36.
5. Useinov, A. S. Izmerenie modulya Yunga sverkhtverdykh materialov s pomoshch'yu skaniruyushchego zondovogo mikroskopa «NanoSkan» / A. S. Useinov // Pribory i tekhnika eksperimenta. − 2004. − № 1. − S. 134—138.
6. Useinov, A. Mutual consistency of hardness testing at micro− and nanometer scales / A. Useinov, K. Gogolinskiy, V. Reshetov // International journal of materials research. − 2009. − N 7. − S. 968.
7. Useinov, A. S. Izmerenie mekhanicheskikh svoystv metodom tsarapaniya / A. S. Useinov, S. S. Useinov // Nanoindustriya. − 2010. − № 6. − S. 28—30.
8. Gogolinskiy, K. V. Izmereniya tverdosti v submikro− i nanometrovom diapazonakh lineynykh razmerov / K. V. Gogolinskiy, V. N. Reshetov, A. S. Useinov // Mir izmereniy. − 2010. − № 8. − S. 41—47.
9. Gogolinskiy, K. V. Ob unifikatsii opredeleniya tverdosti i vozmozhnosti perekhoda pri ee izmerenii k razmernym velichinam / K. V. Gogolinskiy, V. N. Reshetov, A. S. Useinov // Izmeritel'naya tekhnika. − 2011. − № 7. − S. 28—34.
10. Soshnikov, A. I. Issledovanie i modifitsirovanie poluprovodnikovykh struktur almaznymi tokoprovodyashchimi zondami / A. I. Soshnikov // Nanotekhnika. − 2008. − T. 3, vyp. 15. − C. 72—76.
11. ISO 14577:1−4 2002. Metallic materials − Instrumented indentation test for hardness and materials parameters. Part 1, − Geneva: International organization for standardization, 2002.
12. Bulychev, S. I. Metod kineticheskoy tverdosti i mikrotverdosti v ispytaniyakh vdavlivaniem indentorom / S. I. Bulychev, V. P. Alekhin // Zavodskaya laboratoriya. − 1987. − № 11. − S. 76—79.
13. Oliver, W. C. Measurement of hardness and elastic modulus by instrumented indentation: Advances in understanding and refinements to methodology / W. C. Oliver, G. M. Pharr // J. Mater. Res. − 1992. − V. 7, N 6. − P. 1564—1583.
14. Dzhonson, K. Mekhanika kontaktnogo vzaimodeystviya / K. Dzhonson. − M. : Mir, 1989. − 506 s.
15. Tonkov, E. Phase transformation of elements under high pressure / E. Tonkov, E. G. Ponyatovsky. − Boca−raton : CRC Press, 2005. − P. 385.
16. Rao, R. Patterning of silicon by indentation and chemical etching / R. Rao, J. E. Bradby, J. S. Williams // Appl. Phys. Lett. − 2007. − N 3. − P. 1—3.
17. Gogotsi, Y. G. Phase transformations in materials studied by micro−Raman spectroscopy of indentations / Y. G. Gogotsi, A. Kailer, K. G. Nickel // Mater. Res. Inovations. − 1997. − N 1. − P. 3—9.
18. Kailer, A. Phase transformations of silicon caused by contact loading / A. Kailer, Y. G. Gogotsi, K. G. Nickel // J. Appl. Phys. − 1997. − № 7. − P. 3057—3063.
19. Mann, A. B. Contact resistance and transformations during nanoindentation of silicon / A. B. Mann, D. van Heerden, J. B. Pethica, P. Bowes, T. P. Weihs // Philosophical Mag. A. − 2002. − N 10. − P. 1921—1929.
20. Gorelik, S. S. Materialovedenie poluprovodnikov i dielektrikov / S. S. Gorelik, M. Ya. Dashevskiy. − M. : MISiS, 2003. − 480 c.